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Comparison of nitrogen compositions in the as-grown GaNxAs1-x on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy

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7 Author(s)
Fan, W.J. ; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore ; Yoon, S.F. ; Ng, T.K. ; Wang, S.Z.
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High-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectroscopy were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that N compositions measured by the two methods agree well at lower N compositions (x≪3%), and deviate at larger N compositions (x≫3%). The HRXRD measurement by using Vegard’s law to extract the lattice constant of GaNAs, underestimates N composition at larger N compositions. We found that the underestimation is up to 14.3% at the x=4.2%. In order to explain the deviation, a model for analyzing the correlation between lattice parameters and point defects in the epilayer was carried out. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:80 ,  Issue: 22 )