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Ultrathin (001) silicon films bonded onto (001) silicon wafers, which form “surfacial grain boundaries” have been investigated by transmission electron microscopy. The samples were obtained by bonding one silicon-on-insulator (SOI) structure with one silicon wafer. After the removal of the SOI substrate, the remaining top thin film was further reduced by a thermal oxidation. Samples with a given film thickness selected in the 200 nm to 10 nm range were obtained. For very thin films, the thinning procedure can induce a mobility of the interfacial dislocations. To keep the interfaces stable, we have replaced the thermal oxidation thinning by a low-temperature chemical etching. © 2002 American Institute of Physics.