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Stability of interfacial dislocations in (001) silicon surfacial grain boundaries

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4 Author(s)
Rousseau, K. ; CEA-Grenoble, Département de Recherche Fondamentale sur la Matière Condensée, SP2M, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France ; Rouviere, J.L. ; Fournel, F. ; Moriceau, H.

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Ultrathin (001) silicon films bonded onto (001) silicon wafers, which form “surfacial grain boundaries” have been investigated by transmission electron microscopy. The samples were obtained by bonding one silicon-on-insulator (SOI) structure with one silicon wafer. After the removal of the SOI substrate, the remaining top thin film was further reduced by a thermal oxidation. Samples with a given film thickness selected in the 200 nm to 10 nm range were obtained. For very thin films, the thinning procedure can induce a mobility of the interfacial dislocations. To keep the interfaces stable, we have replaced the thermal oxidation thinning by a low-temperature chemical etching. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 22 )

Date of Publication:

Jun 2002

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