By Topic

Low-frequency dielectric relaxation and ac conduction of SrBi2Ta2O9 thin film grown by pulsed laser deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
8 Author(s)
Kim, Ill Won ; Department of Physics, University of Ulsan, Ulsan 680-749, Korea ; Won Ahn, Chang ; Kim, Jin Soo ; Song, Tae Kwon
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Bi-excess SrBi2Ta2O9 (SBT) thin films on Pt/Ti/SiO2/Si substrate were prepared by pulsed laser deposition technique. The SBT structure was characterized by x-ray diffraction studies. The ferroelectric properties were confirmed by P–E hysteresis loops at different applied electric fields. The dielectric constant and the ac conductivity of the Pt/SBT/Pt capacitor were investigated in the frequency range from 0.01 Hz to 100 kHz and in the temperature range from 25 to 400 °C. The thermal activation energy of 0.90 eV is observed in the frequency dependent dielectric constant. The activation energy for conduction process is calculated as 0.91 eV from the slope of ac conductivity at the lowest frequency. The low-frequency dielectric relaxation and the ac conductivity of Bi-excess SBT thin film are discussed in relation to the electrical conduction of SBT/Pt junction. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 21 )