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Browse Journals & Magazines > Applied Physics Letters ...> Volume:80 Issue:21 Help

Characterization of rapid-thermal-annealed InAs/In0.15Ga0.85As dots-in-well heterostructure using double crystal x-ray diffraction and photoluminescence

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5 Author(s)
Krishna, S. ; Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106 ; Raghavan, S. ; Gray, A.L. ; Stintz, A.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1482421 

The effect of rapid thermal annealing on a 10-layer InAs/In0.15Ga0.85As dots-in-a-well (DWELL) heterostructure was studied using double crystal x-ray diffraction (DCXRD) and photoluminescence (PL). From the x-ray rocking curves obtained for symmetric (004) and asymmetric (224) scans, the change in the in-plane and out-of-plane lattice constant and average composition in the DWELL structure were calculated. Thermally induced strain relaxation, which leads to an enhanced In/Ga interdiffusion preferentially along the growth direction, is believed to be the main mechanism for the changes in the structural and optical properties of the sample. Excellent correlation was observed between the PL and the DCXRD measurements. © 2002 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:80 ,  Issue: 21 )

Date of Publication: May 2002

Page(s):
3898 - 3900
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1482421
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
May 2002

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