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Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

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5 Author(s)
Wind, S.J. ; IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 ; Appenzeller, J. ; Martel, R. ; Derycke, V.
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We have fabricated single-wall carbon nanotube field-effect transistors (CNFETs) in a conventional metal–oxide–semiconductor field-effect transistor (MOSFET) structure, with gate electrodes above the conduction channel separated from the channel by a thin dielectric. These top gate devices exhibit excellent electrical characteristics, including steep subthreshold slope and high transconductance, at gate voltages close to 1 V—a significant improvement relative to previously reported CNFETs which used the substrate as a gate and a thicker gate dielectric. Our measured device performance also compares very well to state-of-the-art silicon devices. These results are observed for both p- and n-type devices, and they suggest that CNFETs may be competitive with Si MOSFETs for future nanoelectronic applications. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:80 ,  Issue: 20 )