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Selective growth of single InAs quantum dots using strain engineering

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6 Author(s)
Lee, B.C. ; Department of Electronic Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China ; Lin, S.D. ; Lee, C.P. ; Lee, H.M.
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A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 2 )

Date of Publication:

Jan 2002

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