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Film thickness dependence of the NiSi-to-NiSi2 transition temperature in the Ni/Pt/Si(100) system

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3 Author(s)
Liu, J.F. ; Department of Materials Science and Engineering, Key Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, China ; Feng, J.Y. ; Zhu, J.

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The effect of film thickness on the NiSi-to-NiSi2 transition temperature in the Ni/Pt/Si(100) system has been studied. Three sets of Ni/Pt/Si(100) bilayered samples with the same Ni:Pt ratios but with different film thicknesses were annealed by rapid thermal annealing at 750–900 °C. Both the x-ray diffraction analysis and the sheet resistance measurement show that the thermal stability of Ni(Pt)Si films improves with a decrease in film thickness. This property of Ni(Pt)Si films reveals the good potential for its applications in ultrashallow junctions. The experimental results are explained in terms of classical nucleation theory. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 2 )

Date of Publication:

Jan 2002

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