Electrical transport properties of NiSi₂ layers synthesized by metal vapor vacuum-arc ion implantation: Temperature dependence and two-band model

Nickel disilicide (NiSi₂) layers were synthesized by nickel ion implantation into silicon substrates using a metal vapor vacuum-arc ion source. The electrical transport properties were studied before and after annealing using sheet resistivity and Hall effect measurements from 30 to 400 K, and the results showed surprising features very different from those generally reported NiSi₂ layers. The temperature dependence of sheet resistivity R_s(T) and Hall mobility μ_H(T) in the as-implanted samples showed peculiar peak and valley features varying from sample to sample, depending on the preparation conditions. However, after annealing, the differences between samples seemed to have diminished in that they all showed similar shapes in both the R_s(T) and the μ_H(T) curves. A two-band model was proposed to explain the observed electrical transport properties. © 2002 American Institute of Physics.