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Design of short-cavity, high-brightness 980 nm laser diodes with distributed phase correction

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6 Author(s)
Zhang, Y. ; School of Electrical and Electronic Engineering, University of Nottingham, University Park, Nottingham, NG7 2RD United Kingdom ; Lim, J.J. ; Benson, T.M. ; Sewell, P.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1474618 

We present the design of a 980 nm short-cavity, high-brightness, laterally graded-index (GRIN) laser diode with distributed phase correction. The proposed laser consists of a feed waveguide section coupled to a GRIN waveguide region with a discretized hyperbolic-secant index profile. Detailed wide-angle two-dimensional finite-difference beam propagation method simulations show that this lateral GRIN laser will exhibit significant performance improvements over comparable tapered lasers. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 19 )

Date of Publication:

May 2002

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