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Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature

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2 Author(s)
Bhattacharya, P. ; Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan, Ann Arbor, Michigan 48109-2122 ; Ghosh, S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1478129 

By utilizing tunnel injection of electrons, first demonstrated in quantum well lasers, we have measured enhanced small-signal modulation bandwidth, f-3dB, and reduced temperature sensitivity of the threshold current, characterized by T0, in In0.4Ga0.6As/GaAs self-organized quantum dot ridge waveguide lasers. Values of f-3dB=15 GHz at 283 K and T0=237 K for 318≥T≥278 are measured in these devices. The differential gain at 283 K is dg/dn≅8.5×10-14cm2 and the gain compression factor Є=4.5×10-17cm3. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 19 )

Date of Publication:

May 2002

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