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Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor

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The resonant detection of subterahertz radiation by two-dimensional electron plasma confined in a submicron gate GaAs/AlGaAs field-effect transistor is demonstrated. The results show that the critical parameter that governs the sensitivity of the resonant detection is ωτ, where ω is the radiation frequency and τ is the momentum scattering time. By lowering the temperature and hence increasing τ and increasing the detection frequency ω, we reached ωτ∼1 and observed resonant detection of 600 GHz radiation in a 0.15 μm gate length GaAs field-effect transistor. The evolution of the observed photoresponse signal with temperature and frequency is reproduced well within the framework of a theoretical model. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:80 ,  Issue: 18 )