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1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C

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2 Author(s)
Shchekin, O.B. ; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712-1084 ; Deppe, D.G.

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Data are presented on the influence of p-type modulation doping on the gain characteristics of 1.3 μm InAs quantum dot lasers. The improvement in optical gain leads to very high characteristic temperatures for the lasing threshold that reach 161 K in the temperature range between 0 and 80 °C. 1.3 μm ground state lasing is obtained up to a temperature of 167 °C. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:80 ,  Issue: 18 )