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Performance projections for ballistic carbon nanotube field-effect transistors

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3 Author(s)
Guo, Jing ; Purdue University, 1285 Electrical Engineering Building, West Lafayette, Indiana 47907 ; Lundstrom, Mark ; Datta, Supriyo

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1474604 

The performance limits of carbon nanotube field-effect transistors (CNTFETs) are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide–semiconductor field-effect transistors (MOSFETs). Compared to ballistic MOSFETs, ballistic CNTFETs show similar I–V characteristics but the channel conductance is quantized. For low-voltage, digital applications, the CNTFET with a planar gate geometry provides an on-current that is comparable to that expected for a ballistic MOSFET. Significantly better performance, however, could be achieved with high gate capacitance structures. Because the computed performance limits greatly exceed the performance of recently reported CNTFETs, there is considerable opportunity for progress in device performance. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 17 )

Date of Publication:

Apr 2002

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