By Topic

Application of HfSiON as a gate dielectric material

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Visokay, M.R. ; Silicon Technology Research, Texas Instruments Incorporated, Dallas, Texas ; Chambers, J.J. ; Rotondaro, A.L.P. ; Shanware, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Physical and electrical properties of HfSiON that make this material desirable as the gate dielectric in a standard metal–oxide–semiconductor flow are reported. Sputtering was used to deposit films with minimal low dielectric constant interface layers, equivalent oxide thicknesses below 13 Å, and leakage current density at least two orders of magnitude lower than SiO2. The presence of nitrogen in the film enhances the thermal stability relative to HfSiO, and no crystallization was observed for anneals up to 1100 °C. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 17 )