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Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of Al2O3 (0001) substrates

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6 Author(s)
Mikroulis, S. ; Microelectronics Research Group, Institute of Electronic Structure and Laser, FORTH, P.O. Box 1527, 71110 Heraklion-Crete, GreeceDepartment of Physics, University of Crete, Heraklion-Crete, Greece ; Georgakilas, A. ; Kostopoulos, A. ; Cimalla, V.
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The nitridation of Al2O3 (0001) substrate surfaces by radio-frequency nitrogen plasma has been investigated. A 1.5-nm-thick surface nitride layer occurred for 100 min nitridation at high substrate temperature, while the nitridation appeared to be limited to a surface atomic plane at low temperature. In-plane lattice constant relaxation was observed in both cases. A high nitridation temperature resulted into a Ga face and a low temperature to N-face polarity of overgrown GaN films. However, low temperature nitridation and an AlN buffer layer also produced a Ga-face polarity. The results are consistent with low formation energy of AlN/sapphire films with Ga-face polarity. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 16 )

Date of Publication:

Apr 2002

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