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Microscopic evidence of point defect incorporation in laterally overgrown GaN

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6 Author(s)
Gradecak, S. ; Centre Interdisciplinaire de Microscopie Electronique, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland ; Wagner, V. ; Ilegems, M. ; Riemann, T.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1470696 

Electron microscopy techniques are applied to investigate structural and optical properties of GaN layers selectively grown by hydride vapor phase epitaxy on crystalline GaN seed layers deposited on (0001)Al2O3 substrates. Regions with different optical properties are observed in the cross- sections of the layers. They are defined by the crystallographic planes that serve as growth facets. We give a simple geometrical explanation of point defect incorporation occurring more easily for the {112¯2} GaN than for the {0001} GaN growth facets. Microscopic evidences supporting the model are higher concentrations of point-like defects and local strain variations in laterally grown regions that are revealed by high-resolution electron microscopy. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 16 )

Date of Publication:

Apr 2002

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