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Design, simulation, and realization of solid state memory element using the weakly coupled GMR effect

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2 Author(s)
Zhi Gang Wang ; Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan ; Nakamura, Y.

We found that in a weakly coupled giant magnetoresistive (GMR) sandwich the small-field response's slope is dependent on its past magnetic history. Based on this storage mechanism, we designed a binary solid state memory element. Simulation results show that it operates on the general principle of storing a binary digit in the hard component and sensing nondestructively its remanent state by switching the soft component in such a way that the magnetic state of the hard component is unaltered, thereby causing a dramatic GMR polar readout. So far a 1-b experimental apparatus has been realized

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Magnetics, IEEE Transactions on  (Volume:32 ,  Issue: 2 )