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Thermally activated magnetization reversal in submicron magnetic tunnel junctions for magnetoresistive random access memory

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6 Author(s)
Rizzo, N.D. ; Physical Sciences Research Laboratories, Motorola Labs, 7700 South River Parkway, Tempe, Arizona 85284 ; DeHerrera, M. ; Janesky, J. ; Engel, B.
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We have measured thermally activated magnetization reversal of the free layers in submicron magnetic tunnel junctions to be used for magnetoresistive random access memory. We applied magnetic field pulses to the bits with a pulse duration tp ranging from nanoseconds to 0.1 ms. We have measured the switching probability as a function of tp with a fixed field amplitude H, and as a function of H for fixed tp. For both cases, we find good agreement with the switching probability predicted by the Arrhenius–Néel theory for thermal activation over a single energy barrier. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:80 ,  Issue: 13 )