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Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy

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5 Author(s)
Naranjo, F.B. ; ISOM and Departamento de Ingenierı´a Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040 Madrid, Spain ; Fernandez, S. ; Sanchez-Garc─▒ a, M.A. ; Calle, F.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1463701 

A resonant-cavity InGaN/GaN multiple-quantum-well (MQW) light-emitting diode, incorporating a semitransparent Bragg reflector, has been grown by molecular-beam epitaxy. A 30% reflectivity AlGaN/GaN distributed Bragg reflector and a Ni coating were used as bottom and top mirrors, for backside emission. High-resolution x-ray diffraction data reveal high-quality interfaces in both the MQW and the Bragg mirror. Room-temperature electroluminescence is centered at 507 nm, with an estimated output power of 5 μW at 20 mA. The external efficiency is increased by a factor of 12 compared to similar structures without resonant cavity. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 12 )

Date of Publication:

Mar 2002

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