Cart (Loading....) | Create Account
Close category search window
 

Determination of electron trap distribution in the gate–oxide region of the deep submicron metal–oxide–semiconductor structure from direct tunneling gate current

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Chowdhury, Murshed Mahmud ; Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh ; uz Zaman, Saif ; Haque, A. ; Khan, M.Rezwan

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1463705 

The trap distribution inside the oxide layer of a metal–oxide–semiconductor device is studied via the direct tunneling gate current. Effects of traps are incorporated in the Schrödinger’s equation using an imaginary potential term. Different spatial distributions of traps have been considered to obtain a best fit between the simulated and the experimentally measured direct tunneling gate currents. Comparing our simulated current with experimental data, we have determined that the distribution of traps introduced during fabrication can be represented by a Gaussian function with its peak at the gate–electrode/oxide interface. This distribution is found to be independent of the gate–oxide thickness. Our results show that electric-field-induced traps, generated during tunneling, are proportional to the carrier density within the oxide layer and also to the traps introduced during fabrication. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 12 )

Date of Publication:

Mar 2002

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.