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Structural instability of 4H–SiC polytype induced by n-type doping

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5 Author(s)
Liu, J.Q. ; Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 ; Chung, H.J. ; Kuhr, T. ; Li, Q.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1463203 

Spontaneous formation of stacking faults in heavily nitrogen-doped 4H-polytype silicon carbide crystals have been observed by transmission electron microscopy (TEM). Faults were present in as-grown boules and additional faults were generated by annealing in argon at 1150 °C. All faults had identical structure consisting of six layers stacked in a cubic sequence as determined by high-resolution TEM, and were interpreted as a result of two Shockley partial dislocations gliding on two neighboring basal planes of SiC. It is argued that the energy of faulted 4H silicon carbide is lower than the energy of perfect heavily doped (n≫1×1019cm-3) crystal at typical processing temperatures, thus providing a driving force for transformation. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 12 )

Date of Publication:

Mar 2002

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