Effect of annealing temperature on physical and electrical properties of Bi_3.25La_0.75Ti₃O₁₂ thin films on Al₂O₃-buffered Si

The effect of annealing temperature, especially at high temperatures, on the physical and electrical properties of Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films on Al₂O₃ (10 nm)/Si has been investigated. The width of memory window in capacitance–voltage curves for BLT/Al₂O₃/Si capacitors annealed at temperature range of 700 °C–950 °C increases with increasing annealing temperature. At the highest annealing temperature of 950 °C, a large ferroelectric memory window of 13 V is obtained under ±15 V sweep voltage, and this large ferroelectric memory window should be related to the reduced leakage current. Owing to the excellent electrical properties, the high-temperature stable BLT/Al₂O₃/Si capacitor is compatible with current very large scale integrated technology process. © 2002 American Institute of Physics.