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Browse Journals & Magazines > Applied Physics Letters ...> Volume:80 Issue:10 Help

Effect of N2O plasma treatment on the stabilization of water absorption in fluorinated silicon-oxide thin films fabricated by electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition

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4 Author(s)
Kim, S.P. ; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusung-Dong, Yusung-Gu, Taejon 305-701, Korea ; Choi, S.K. ; Youngsoo Park ; Ilsub Chung

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The variation of residual stress with the water absorption was reduced drastically by the N2O plasma treatment for fluorinated silicon-oxide thin films. Fourier transformed infrared spectroscopy analysis showed that the film was oxidized by the plasma treatment. It was also determined that the oxidation occurred on the film surface from the P-etch rate and x-ray photoelectron spectroscopy analysis. The experimental results show that the stabilization results from the oxidation of the surface by the N2O plasma treatment. © 2002 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:80 ,  Issue: 10 )

Date of Publication: Mar 2002

Page(s):
1728 - 1730
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1458528
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Mar 2002

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