Cart (Loading....) | Create Account
Close category search window

Integrally gated carbon nanotube-on-post field emitter arrays

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hsu, David S.Y. ; Chemistry Division, Naval Research Laboratory, Washington, DC 20375 ; Shaw, J.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Multiwalled carbon nanotubes were grown using chemical vapor deposition on the tops of blunt vertical silicon posts in cells having a horizontal gate aperture of conventional field emitter design. We obtained over 1 mA total emission current from a single array, or 0.3 μA per cell at 40 V. In addition to the low voltage operation, the most distinctive differences from conventional field emitter arrays include their stability and the lack of catastrophic arcing without any special sample preparation.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 1 )

Date of Publication:

Jan 2002

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.