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Integrally gated carbon nanotube-on-post field emitter arrays

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2 Author(s)
Hsu, David S.Y. ; Chemistry Division, Naval Research Laboratory, Washington, DC 20375 ; Shaw, J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1428775 

Multiwalled carbon nanotubes were grown using chemical vapor deposition on the tops of blunt vertical silicon posts in cells having a horizontal gate aperture of conventional field emitter design. We obtained over 1 mA total emission current from a single array, or 0.3 μA per cell at 40 V. In addition to the low voltage operation, the most distinctive differences from conventional field emitter arrays include their stability and the lack of catastrophic arcing without any special sample preparation.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 1 )

Date of Publication:

Jan 2002

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