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Enhanced dielectric properties of SrTiO3 epitaxial thin film for tunable microwave devices

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8 Author(s)
Bouzehouane, K. ; Unité Mixte de Physique, C.N.R.S./Thales, F 91404 Orsay, France ; Woodall, P. ; Marcilhac, B. ; Khodan, A.N.
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The performance of tunable microwave devices based on heteroepitaxial YBa2Cu3Ox/SrTiO3 films on (001) LaAlO3 substrates has been evaluated. It was ascertained that “out-of-plane” SrTiO3 lattice parameter is the relevant factor in determining both device agility and dielectric loss. After high temperature annealing (1100 °C, 1 atm O2), only SrTiO3 layers deposited under low oxygen pressure (∼10-5 Torr) show an appreciable reduction of the dielectric losses while maintaining high agility. Annealed samples exhibit voltage independent losses of ∼5×10-3 simultaneously with 55% dielectric agility at 6 GHz and 77 K. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:80 ,  Issue: 1 )