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Material-specific mapping of metal/semiconductor/dielectric nanosystems at 10 nm resolution by backscattering near-field optical microscopy

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2 Author(s)
Hillenbrand, R. ; Max-Planck-Institut für Biochemie, Abt. Molekulare Strukturbiologie, D-82152 Martinsried, Germany ; Keilmann, F.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1428767 

We report that three main constituents of nanosystems—metals, semiconductors, and dielectrics—can be categorically distinguished by their specific optical near-field contrast at 633 nm wavelength. The decisive property is the local dielectric constant as we show by calculations based on dipolar coupling theory. Experiments with Au/Si/PS(polystyrene) nanostructures using an apertureless scattering-type near-field optical microscope yield optical images at 10 nm resolution, with clear material contrast close to predicted levels. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 1 )

Date of Publication:

Jan 2002

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