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Browse Journals & Magazines > Applied Physics Letters ...> Volume:59 Issue:6 Help

Monolithic integration of a new optoelectronic device based on a modulation‐doped heterostructure

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3 Author(s)
Honda, Y. ; Department of Physical Electronics, Faculty of Engineering, Hiroshima University, 1‐4‐1, Kagamiyama, Higashihiroshima 724, Japan ; Suemune, I. ; Yamanishi, M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.105403 

Monolithic integration of a new type of optoelectronic device which functions not only as a lateral‐current‐injection laser but also as a junction field‐effect transistor based on a modulation‐doped heterostructure is proposed and demonstrated for the first time. The static and dynamic modulation characteristics of the integrated device were studied. The dynamic on/off ratio of 9 in the light output was observed with the preliminary modulation experiment at the repetition frequency of 50 MHz.

Published in:
Applied Physics Letters  (Volume:59 ,  Issue: 6 )

Date of Publication: Aug 1991

Page(s):
621 - 623
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.105403
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Aug 1991

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