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Monolithic integration of a new type of optoelectronic device which functions not only as a lateral‐current‐injection laser but also as a junction field‐effect transistor based on a modulation‐doped heterostructure is proposed and demonstrated for the first time. The static and dynamic modulation characteristics of the integrated device were studied. The dynamic on/off ratio of 9 in the light output was observed with the preliminary modulation experiment at the repetition frequency of 50 MHz.