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Observation of the InP surface thermally cleaned in an arsenic flux using a scanning tunneling microscope

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2 Author(s)
Ohkouchi, Shunsuke ; Optoelectronics Technology Research Laboratory (OTL), 5‐5 Tohkodai, Tsukuba, Ibaraki 300‐26, Japan ; Tanaka, Ichiro

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An InP surface thermally cleaned in an arsenic flux was observed using an ultrahigh‐vacuum scanning tunneling microscope (UHV‐STM). In the STM image, about 1.6 nm period lines of 0.8 nm width with two rows were observed along the [110] direction. This result suggests that the surface comprises two In‐In dimers and two missing dimers per (4×2) cells.

Published in:
Applied Physics Letters  (Volume:59 ,  Issue: 13 )

Date of Publication: Sep 1991

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