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Optical waveguide formed by cubic silicon carbide on sapphire substrates

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3 Author(s)
Tang, Xiao ; Department of Electrical Engineering and Materials Science Research Center of Excellence, School of Engineering, Howard University, Washington DC 20059 ; Wongchotigul, Kobchat ; Spencer, Michael G.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.104476 

Optical confinement in beta silicon carbide (β‐SiC) thin films on sapphire substrate is demonstrated. Measurements are performed on waveguides formed by the mechanical transfer of thin β‐SiC films to sapphire. Recent results of epitaxial films of SiC on sapphire substrates attest to the technological viability of optoelectronic devices made from silicon carbide. Far‐field mode patterns are shown. We believe this is the first step in validating a silicon carbide optoelectronic technology.

Published in:

Applied Physics Letters  (Volume:58 ,  Issue: 9 )

Date of Publication:

Mar 1991

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