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Optical confinement in beta silicon carbide (β‐SiC) thin films on sapphire substrate is demonstrated. Measurements are performed on waveguides formed by the mechanical transfer of thin β‐SiC films to sapphire. Recent results of epitaxial films of SiC on sapphire substrates attest to the technological viability of optoelectronic devices made from silicon carbide. Far‐field mode patterns are shown. We believe this is the first step in validating a silicon carbide optoelectronic technology.