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Saturation of Si atom concentration in Si planar‐doped InP layers grown by metalorganic chemical vapor deposition

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4 Author(s)
Ishikawa, Hideto ; Sony Corporation Research Center, 174, Fujitsuka‐cho, Hodogaya‐ku, Yokohama 240, Japan ; Miwa, Shiro ; Maruyama, Toshiyuki ; Kamada, Mikio

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A mechanism which causes saturation in Si atom concentration in planar‐doped InP layers was investigated. The layers were grown by atmospheric metalorganic chemical vapor deposition (MOCVD) and planar doping was performed by supplying Si2H6 in PH3 atmosphere. We found that the sheet Si atom concentration of the layers saturated as a function of doping time. We propose a new model which can describe the saturation as competition between adsorption and desorption. This model will describe the doping time dependence and the PH3 flow rate dependence of sheet Si atom concentration of planar‐doped InP layers grown by MOCVD.

Published in:

Applied Physics Letters  (Volume:58 ,  Issue: 8 )

Date of Publication:

Feb 1991

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