Cart (Loading....) | Create Account
Close category search window
 

Highly conductive and wide optical band gap n‐type μc‐SiC prepared by electron cyclotron resonance plasma‐enhanced chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Futagi, Toshiro ; Semiconductor Basic Technology Research Lab, Electronics R&D Laboratories, Nippon Steel Corporation 1618 Ida, Nakahara‐ku, Kawasaki 211, Japan ; Katsuno, Masakazu ; Ohtani, Noboru ; Ohta, Yasumitsu
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.104731 

We have investigated the gas pressure dependence of electron cyclotron resonance (ECR) plasma‐enhanced chemical vapor deposition (PECVD) and prepared n‐type μc‐SiC:H with wide optical band gap (2.1–2.5 eV) and high dark conductivity (10-3– 1 S/cm). It has been suggested from plasma diagnoses of the ECR plasma that at low gas pressure a strong etching effect of hydrogen radicals and/or ions dominates the film growth process and the hydrogen ions impinging on the growing surface make the formation of μc‐SiC:H difficult, and that at high gas pressure, for the formation of μc‐SiC:H, there are nonemissive radicals contributing to the surface coverage or a nucleus formation mechanism which has not been taken into consideration in conventional rf‐PECVD.

Published in:

Applied Physics Letters  (Volume:58 ,  Issue: 25 )

Date of Publication:

Jun 1991

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.