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Highly conductive and wide optical band gap n‐type μc‐SiC prepared by electron cyclotron resonance plasma‐enhanced chemical vapor deposition

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6 Author(s)
Futagi, Toshiro ; Semiconductor Basic Technology Research Lab, Electronics R&D Laboratories, Nippon Steel Corporation 1618 Ida, Nakahara‐ku, Kawasaki 211, Japan ; Katsuno, Masakazu ; Ohtani, Noboru ; Ohta, Yasumitsu
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We have investigated the gas pressure dependence of electron cyclotron resonance (ECR) plasma‐enhanced chemical vapor deposition (PECVD) and prepared n‐type μc‐SiC:H with wide optical band gap (2.1–2.5 eV) and high dark conductivity (10-3– 1 S/cm). It has been suggested from plasma diagnoses of the ECR plasma that at low gas pressure a strong etching effect of hydrogen radicals and/or ions dominates the film growth process and the hydrogen ions impinging on the growing surface make the formation of μc‐SiC:H difficult, and that at high gas pressure, for the formation of μc‐SiC:H, there are nonemissive radicals contributing to the surface coverage or a nucleus formation mechanism which has not been taken into consideration in conventional rf‐PECVD.

Published in:

Applied Physics Letters  (Volume:58 ,  Issue: 25 )

Date of Publication:

Jun 1991

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