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Fabrication of patterned Gex/Si1-x/Si layers by pulsed laser induced epitaxy

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6 Author(s)
Chang, Y. ; Solid State Laboratory and Department of Electrical Engineering, Stanford University, Stanford, California 94305 ; Chou, S.Y. ; Kramer, J. ; Sigmon, T.W.
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Selective growth of GexSi1-x on Si is demonstrated for the first time using a pulsed laser induced epitaxy technique, combined with either standard oxide or liftoff patterning processes. Two different dimensions of Ge0.12Si0.88/Si lateral wells are formed, 3.5 μm wide by 1700 Å deep, and 6 μm wide by 1300 Å deep. High‐resolution transmission electron microscopy, combined with energy‐dispersive x‐ray imaging, reveals a well‐defined two‐dimensional (2D) Ge redistribution profile with no significant line or surface defects observed. The 2D Ge well distribution profiles, governed by heat and mass transport during the laser processing, are discussed.

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Applied Physics Letters  (Volume:58 ,  Issue: 19 )