Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.105043
We report on room‐temperature absorption properties of a GaAs/AlAs short‐period superlattice in which, at certain electric fields perpendicular to the layers, different conduction subbands centered in adjacent and nonadjacent wells show a level repulsion and an anticrossing behavior. The associated mixing between the corresponding electron wave functions reduces the oscillator strengths and influences the transition energies of certain excitons. These electric field effects can be used to improve the performance of electro‐optical modulator devices. Our results also provide a method to investigate the high‐field coherence properties of charge carriers in superlattices.