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Room‐temperature enhancement of electro‐optical modulation by resonance‐induced exciton mixing in a GaAs/AlAs superlattice

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2 Author(s)
Schneider, H. ; Fraunhofer–Institut für Angewandte Festkörperphysik, Tullastrasse 72, D‐7800 Freiburg, Federal Republic of Germany ; Ploog, K.

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We report on room‐temperature absorption properties of a GaAs/AlAs short‐period superlattice in which, at certain electric fields perpendicular to the layers, different conduction subbands centered in adjacent and nonadjacent wells show a level repulsion and an anticrossing behavior. The associated mixing between the corresponding electron wave functions reduces the oscillator strengths and influences the transition energies of certain excitons. These electric field effects can be used to improve the performance of electro‐optical modulator devices. Our results also provide a method to investigate the high‐field coherence properties of charge carriers in superlattices.

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Applied Physics Letters  (Volume:58 ,  Issue: 18 )