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An electron cyclotron resonance (ECR) plasma source has been used with methane gas to perform carbon delta‐doping in GaAs grown by molecular beam epitaxy (MBE). The ECR plasma source is installed on a chemical vapor deposition chamber which is vacuum connected to a conventional MBE apparatus. Good surface morphologies, high sheet carrier densities (1–7×1012 cm-2), and reasonable hole mobilities (75–110 cm2/V s) are obtained.