Leakage mechanisms of titanium silicided n⁺/p junctions fabricated using rapid thermal processing

We report a physical analysis of the reverse leakage currents observed in titanium silicided n⁺/p junctions fabricated using rapid thermal processing. By studying the dependence of currents on temperature, bias voltage, and diode geometry, we have been able to identify the leakage mechanisms. A defect level at Ev+0.30 eV, detected in concentrations ≳10¹⁴ cm^-3, is shown to be responsible for a low leakage current component, through a generation‐recombination mechanism. Silicide asperities protruding through the metallurgical junction are proposed to account for the tunneling nature of a second, high leakage, distribution of currents.