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High quality AlxGa1-xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor

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4 Author(s)
Hobson, W.S. ; AT&T Bell Laboratories, Murray Hill, New Jersey 07974 ; Harris, T.D. ; Abernathy, C.R. ; Pearton, S.J.

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High quality AlxGa1-xAs has been grown by low‐pressure (30 Torr) organometallic vapor phase epitaxy (OMVPE) using a novel precursor, trimethylamine alane (TMAAl), as the aluminum source. The epilayers exhibited featureless surface morphology, very strong room‐temperature photoluminescence (PL), and excellent compositional uniformity (x=0.235±0.002 over a 40 mm diameter). The residual carbon incorporation, which determined the background doping, depended largely upon the choice of gallium precursor. Using triethylgallium, carbon incorporation could be largely suppressed ([C]≪1016 cm-3). The carbon‐related emission intensity was less than the bound exciton emission in low‐temperature (1.6 K) PL even at excitation powers as low as 50 μW cm-2. By sharp contrast, the use of trimethylgallium led to much higher C concentrations (2–5×1017cm-3). Under appropriate conditions, therefore, the use of TMAAl produces extremely high purity AlGaAs of superior quality to AlGaAs grown using conventional precursors.

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Applied Physics Letters  (Volume:58 ,  Issue: 1 )