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Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence‐band mixing effects

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3 Author(s)
Corzine, S.W. ; Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106 ; Yan, R.H. ; Coldren, L.A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.103757 

In this letter, we present the first detailed theoretical study of gain in strained InGaAs/AlGaAs quantum wells, taking into account the complex nature of the valence‐subband structure, which must be included in any realistic model. We first compare the material gain as a function of carrier and radiative current density for a strained and unstrained quantum well. We then present calculations of theoretical differential gain, carrier density, and radiative current density at transparency as a function of indium mole fraction in the well.≪lz≫ ≪lz≫ ≪lz≫

Published in:

Applied Physics Letters  (Volume:57 ,  Issue: 26 )

Date of Publication:

Dec 1990

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