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A technique for the selective growth and patterning of device quality materials has been developed. This technology uses a dielectric‐assisted liftoff (DAL) process to pattern molecular beam epitaxy (MBE) grown GaAs into isolated device regions. We have successfully demonstrated the applicability of this dielectric‐assisted liftoff process by fabricating power metal‐semiconductor field‐effect transistor (MESFET) devices with 1, 1.5, and 3 mm gate width geometries. Material and device performance of these DAL patterned MESFETs has been found to be comparable to our standard MBE‐grown and mesa isolated MESFET structures.