Cart (Loading....) | Create Account
Close category search window

Role of atomic oxygen produced by an electron cyclotron resonance plasma in the oxidation of YBa2Cu3O7-x thin films studied by in situ resistivity measurement

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Yamamoto, K. ; Stanford University, Stanford, California 94305 ; Lairson, B.M. ; Eom, C.B. ; Hammond, R.H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In situ resistivity measurements have been performed to monitor the effect of activated oxygen (atomic oxygen, oxygen ions) on films subjected to an electron cyclotron resonance (ECR) oxygen plasma. The resistivity of c‐axis and mixed a+c oriented YBa2Cu3O7-x films, which were deposited in situ by 90° off‐axis magnetron sputtering, was measured as a function of time in an ECR oxygen plasma. The resistivity of a film in the plasma corresponds to that found in the same film subjected to higher oxygen pressure when no plasma is present. The resistivity is shown to be determined by the flux of atomic oxygen. The steady‐state concentration in the film is found to depend on the kinetics of oxygen dissociation at the film surface. From the temperature dependence of the activity of atomic oxygen, we determined the activation energy for the decomposition of O2 at the surface of films with mixed a+c axis orientation and c‐axis orientation to be ∼1.3 eV and ∼2.1 eV, respectively. It is proposed that in the presence of atomic oxygen, the phase diagram of oxygen content versus temperature of YBa2Cu3O7-x is changed in a way that depends on the atomic oxygen flux.

Published in:

Applied Physics Letters  (Volume:57 ,  Issue: 18 )

Date of Publication:

Oct 1990

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.