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Browse Journals & Magazines > Applied Physics Letters ...> Volume:57 Issue:18 Help

33 ps optical switching of symmetric self‐electro‐optic effect devices

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8 Author(s)
Boyd, G.D. ; AT&T Bell Laboratories, Crawfords Corner Road, Holmdel, New Jersey 07733 ; Fox, A.M. ; Miller, D.A.B. ; Chirovsky, L.M.F.
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We report significant improvement in the optical switching times of symmetric self‐electro‐optic effect devices due to enhanced tunneling by using a 35 Å barrier versus the previous 60 Å barrier thick multiple quantum well GaAs/AlxGa(1-x)As devices. Also, the voltage required for bistability was reduced from 10 V in the thick barrier devices to 3 V in the thin barrier devices with no apparent degradation in the contrast ratio.

Published in:
Applied Physics Letters  (Volume:57 ,  Issue: 18 )

Date of Publication: Oct 1990

Page(s):
1843 - 1845
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.104034
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Oct 1990

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