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GaAs/GaInP multiquantum well long‐wavelength infrared detector using bound‐to‐continuum state absorption

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5 Author(s)
Gunapala, S.D. ; AT&T Bell Laboratories, Murray Hill, New Jersey 07974 ; Levine, B.F. ; Logan, R.A. ; Tanbun‐Ek, T.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.104027 

We demonstrate an 8 μm superlattice infrared detector which utilizes bound‐to‐continuum state intersubband absorption in lattice‐matched GaAs/Ga0.5In0.5P multiquantum well structures grown by atmospheric pressure metalorganic vapor phase epitaxy. The band offsets of the GaAs/Ga0.5In0.5P heterosystem are obtained by comparing the theoretical absorption spectrum and the measured responsivity spectrum. The values determined for ΔEc and ΔEv are 221 and 262 meV, respectively.

Published in:

Applied Physics Letters  (Volume:57 ,  Issue: 17 )

Date of Publication:

Oct 1990

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