By Topic

GaAs/GaInP multiquantum well long‐wavelength infrared detector using bound‐to‐continuum state absorption

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Gunapala, S.D. ; AT&T Bell Laboratories, Murray Hill, New Jersey 07974 ; Levine, B.F. ; Logan, R.A. ; Tanbun‐Ek, T.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.104027 

We demonstrate an 8 μm superlattice infrared detector which utilizes bound‐to‐continuum state intersubband absorption in lattice‐matched GaAs/Ga0.5In0.5P multiquantum well structures grown by atmospheric pressure metalorganic vapor phase epitaxy. The band offsets of the GaAs/Ga0.5In0.5P heterosystem are obtained by comparing the theoretical absorption spectrum and the measured responsivity spectrum. The values determined for ΔEc and ΔEv are 221 and 262 meV, respectively.

Published in:

Applied Physics Letters  (Volume:57 ,  Issue: 17 )