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We have fabricated a monolithically integrated p‐i‐n field‐effect transistor (FET) receiver consisting of an InGaAs/InP p‐i‐n detector and a high‐speed InP metal‐insulator‐semiconductor field‐effect transistor. The receiver sensitivity of the p‐i‐n FET is -18.2 dBm at a bit rate of 2.4 Gb/s and a wavelength of 1.55 μm.