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Monolithic InGaAs p‐i‐n InP metal‐insulator‐semiconductor field‐effect transistor receiver for long‐wavelength optical communications

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6 Author(s)
Mattera, V.D. ; AT&T Bell Laboratories, Solid State Technology Center, Breinigsville, Pennsylvania 18103 ; Antreasyan, A. ; Garbinski, P.A. ; Temkin, H.
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We have fabricated a monolithically integrated p‐i‐n field‐effect transistor (FET) receiver consisting of an InGaAs/InP p‐i‐n detector and a high‐speed InP metal‐insulator‐semiconductor field‐effect transistor. The receiver sensitivity of the p‐i‐n FET is -18.2 dBm at a bit rate of 2.4 Gb/s and a wavelength of 1.55 μm.

Published in:

Applied Physics Letters  (Volume:57 ,  Issue: 13 )