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Low‐threshold continuous‐wave room‐temperature operation of AlxGa1-xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2 back coating

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6 Author(s)
Egawa, T. ; Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso‐cho, Showa‐ku, Nagoya 466, Japan ; Tada, H. ; Kobayashi, Y. ; Soga, T.
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We demonstrate the first room‐temperature low‐threshold continuous‐wave (cw) operation of Al0.3Ga0.7As/GaAs single quantum well (SQW) heterostructure lasers grown by metalorganic chemical vapor deposition (MOCVD) on Si substrates using techniques of SiO2 back coating and thermal cycle annealing. The all‐MOCVD‐grown SQW lasers on GaAs/Si with etch pit density of 1.5× 107 cm-2 have threshold current as low as 55 mA (1.41 kA/cm2) under cw at room temperature. The SiO2 back coating is effective to obtain excellent current‐voltage characteristics. Thermal cycle annealing is also found to improve the crystallinity of GaAs/Si and to contribute to room‐temperature cw operation of the lasers on Si substrates.

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Applied Physics Letters  (Volume:57 ,  Issue: 12 )