By Topic

Y1Ba2Cu3O7-x thin films grown on sapphire with epitaxial MgO buffer layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Berezin, A.B. ; Department of Physics, University of Texas, Austin, Texas 78712 ; Yuan, C.W. ; de Lozanne, A.L.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.104238 

We have developed a process for growing as‐deposited Y1Ba2Cu3O7-x (YBCO) thin films on R‐plane sapphire substrates with an intermediate layer of epitaxial MgO. The orientation of the layers has YBCO (001) parallel to MgO (100) which is parallel to the substrate normal. These films are superconducting by 88.5 K and exhibit Jc=1×106 A/cm2 at 77 K and 2.5×107 A/cm2 at 4.2 K. The MgO layers may be grown at temperatures as low as 370 °C and are very stable in air. Little or no diffusion occurs between the substrate and the two layers as measured by Auger profiling.

Published in:

Applied Physics Letters  (Volume:57 ,  Issue: 1 )