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Heteroepitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor deposition

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3 Author(s)
Lee, M.K. ; Department of Electrical Engineering, National Sun Yat‐Sen University, Kaohsiung 80424, Taiwan, Republic of China ; Wuu, D.S. ; Tung, H.H.

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Heteroepitaxial growth of InP on Si by low pressure metalorganic chemical vapor deposition is reported. The trimethylindium‐trimethylphosphine adduct was used as the In source in this study and PH3 as the source of P. From x‐ray and scanning electron microscopy examinations, good crystallinity InP epilayers with mirrorlike surfaces can be grown directly on (100) and (111) Si substrates. The carrier concentration profile shows that the carrier distribution in the InP epilayer is very uniform. The efficient photoluminescence compared with that of InP homoepitaxy shows that the InP/Si epilayers are of good quality.

Published in:

Applied Physics Letters  (Volume:50 ,  Issue: 24 )

Date of Publication:

Jun 1987

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