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Accurate small-signal modeling of HFET's for millimeter-wave applications

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4 Author(s)
Rorsman, N. ; Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden ; Garcia, M. ; Karlsson, C. ; Zirath, H.

In this paper we discuss the small-signal modeling of HFET's at millimeter-wave frequencies. A new and iterative method is used to extract the parasitic components. This method allows calculation of a π-network to model the heterojunction field-effect transistor (HFET) pads, thus extending the validity of the model to higher frequencies. Formulas are derived to translate this π-network into a transmission line. A new and general cold field-effect transistor (FET) equivalent circuit, including a Schottky series resistance, is used to extract the parasitic resistances and inductances. Finally, a new and compact set of analytical equations for calculation of the intrinsic parameters is presented. The real part of Y12 is accounted for in these equations and its modeling is discussed. The accounting of Re(Y12 ) improves the S-parameter modeling. Model parameters are extracted for an InAlAs/InGaAs/InP HFET from measured S-parameters up to 50 GHz, and the validity of the model is evaluated by comparison with measured data at 75-110 GHz

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:44 ,  Issue: 3 )