By Topic

Temperature-dependent modeling of gallium arsenide MESFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Lardizabal, S.M. ; Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA ; Fernandez, Allen S. ; Dunleavy, L.P.

A complete temperature-dependent small signal model extraction methodology is used to achieve accurate circuit level simulations of metal semiconductor field-effect transistor (MESFET) amplifier performance over temperature. The procedure applies a previously described field-effect transistor (FET) modeling approach to predict the performance of a small signal amplifier over a -55°C to 100°C temperature range. This work includes a description of the MESFET equivalent circuit element thermal coefficients along with an amplifier simulation. Therefore, for the first time, a clear correspondence between circuit level simulation and measured results over temperature are published together. A new comparison of published temperature-dependent data shows a common agreement for amplifier gain variations of 0.015 dB/°C/Stage for a broad range of designs from 400 K down to cryogenic levels (77 K)

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:44 ,  Issue: 3 )