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Transmission electron microscopy and photoluminescence study of silicon and boron ion implanted GaAs/GaAlAs quantum wells

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7 Author(s)
Arakawa, Y. ; California Institute of Technology, Pasadena, California 91125 ; Smith, J.S. ; Yariv, A. ; Otsuka, N.
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Transmission electron microscopy (TEM) and photoluminescence (PL) data are presented on GaAs/Ga0.25Al0.75As quantum well (QW) structures grown by molecular beam epitaxy which were implanted with B ions and Si ions, respectively, to a dose of 1015 cm-2. TEM observations reveal that significant intermixing of the layers occurs in Si implanted QW structures at a depth well beyond the projected range of the implanted ion after 1 h thermal annealing at 850 °C. A subsequent 2‐h annealing causes mixing near the surface, while the unmixed region still remains at a distance twice the projection range. In contrast, intermixing was not observed in annealed B implanted QW structures, which suggests a strong dependence of alloy mixing effects on the impurity. PL data support these results.

Published in:

Applied Physics Letters  (Volume:50 ,  Issue: 2 )

Date of Publication:

Jan 1987

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