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Defect structure of epitaxial CdTe layers grown on {100} and {111}B GaAs and on {111}B CdTe by metalorganic chemical vapor deposition

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4 Author(s)
Brown, P.D. ; Department of Applied Physics and Electronics, University of Durham, South Road, Durham, DH1 3LE United Kingdom ; Hails, J.E. ; Russell, G.J. ; Woods, J.

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The technique of cross‐sectional transmission electron microscopy has been used to investigate the defect content of epitaxial CdTe layers grown on {100} and {111}B GaAs and on {111}B CdTe by metalorganic chemical vapor deposition. Growth on {111} oriented substrates invaribly gave rise to layers of {111} orientation and these contained a large number of thin (100–1000 Å) lamella twins lying parallel to the interface. In contrast, layers grown on {100} GaAs substrates were found to exhibit either {100} or {111} orientation. Epilayers with the former alignment contained arrays of misfit dislocations at the interface, whereas those with the latter orientation exhibited a density and distribution of lamella twins which were comparable with those of layers grown on {111} substrates. The presence of these defects in homoepitaxially grown CdTe, where the effects of lattice mismatch do not arise, clearly indicates that twinning in {111}B CdTe epilayers is a growth phenomenon.

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Applied Physics Letters  (Volume:50 ,  Issue: 17 )