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We demonstrate the projection patterning of Al by laser activated metalorganic chemical vapor deposition. The laser activated deposition technique, which selects surface over gas phase reactions, is found to be compatible with standard photolithographic patterning and shows promise for simplifying integrated circuit fabrication. Two applications are highlighted: metal‐oxide field‐effect transistor metallization and Al interconnect fabrication.
Published in:
Applied Physics Letters
(Volume:50
,
Issue:
12
)
Date of Publication: Mar 1987
- Page(s):
- 766 - 768
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.98039
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Mar 1987
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